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Freescale Semiconductor Technical Data
Document Number: MRF21125 Rev. 9, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2 - Carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz, Channel bandwidth = 3.84 MHz, adjacent channels at 5 MHz , ACPR and IM3 measured in 3.84 MHz bandwidth. Peak/Avg. = 8.5 dB @ 0.01% probability on CCDF. Output Power -- 20 Watts Efficiency -- 18% Gain -- 13 dB IM3 -- - 43 dBc ACPR -- - 45 dBc * Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW Output Power Features * Internally Matched for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF21125R3 MRF21125SR3
2110 - 2170 MHz, 125 W, 28 V LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465B - 03, STYLE 1 NI - 880 MRF21125R3
CASE 465C - 02, STYLE 1 NI - 880S MRF21125SR3
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 330 1.89 - 65 to +150 150 200 Unit Vdc Vdc W W/C C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 0.53 Unit C/W
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF21125R3 MRF21125SR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 Adc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) On Characteristics Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) Gate Threshold Voltage (VDS = 10 V, ID = 300 A) Gate Quiescent Voltage (VDS = 28 V, ID = 1300 mA) Drain- Source On - Voltage (VGS = 10 V, ID = 1 A) Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Crss -- 5.4 -- pF gfs VGS(th) VGS(Q) VDS(on) -- 2 2.5 -- 10.8 -- 3.9 0.12 -- 4 4.5 -- S Vdc Vdc Vdc V(BR)DSS IGSS IDSS 65 -- -- -- -- -- -- 1 10 Vdc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth, IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% probability on CCDF. Common- Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured at f1 - 10 MHz and f2 +10 MHz referenced to carrier channel power.) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured at f1 - 5 MHz and f2 +5 MHz referenced to carrier channel power.) Input Return Loss (VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) 1. Part internally matched both on input and output. (continued) Gps 12 13 -- dB
17
18
--
%
IM3
--
- 43
- 40
dBc
ACPR
--
- 45
- 40
dBc
IRL
--
- 12
- 9.0
dB
MRF21125R3 MRF21125SR3 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Typical Two - Tone Performance (In Freescale Test Fixture) Common- Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Intermodulation Distortion (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Typical CW Performance Common- Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 125 W CW, IDQ = 1600 mA, f1 = 2170.0 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 125 W CW, IDQ = 1600 mA, f = 2170.0 MHz) Gps -- -- 11.5 46 -- -- dB % Gps -- 12 -- dB Symbol Min Typ Max Unit
--
34
--
%
IMD
--
- 30
--
dBc
MRF21125R3 MRF21125SR3 RF Device Data Freescale Semiconductor 3
B1 R4 VGG + R2 + C2 C3 + C4 R1 R3 C5 C6 C7 C8 C9 C10 W1 + C11 + C12 C13 C14 VDD +
Z6 RF INPUT
Z7 RF OUTPUT
Z1 C1
Z2
Z3
Z4
Z5 DUT
Z8
Z9
Z10
Z11
Z12 C15
Z13 C16
Z1 Z2 Z3 Z4 Z5 Z6 Z7
1.212 x 0.082 Microstrip 0.236 x 0.082 Microstrip 0.086 x 0.254 Microstrip 0.357 x 0.082 Microstrip 0.274 x 1.030 Microstrip 0.466 x 0.050 Microstrip 0.501 x 0.050 Microstrip
Z8 Z9 Z10 Z11 Z12 Z13 PCB
0.600 x 1.056 Microstrip 0.179 x 0.219 Microstrip 0.100 x 0.336 Microstrip 0.534 x 0.142 Microstrip 0.089 x 0.080 Microstrip 0.620 x 0.080 Microstrip Arlon GX0300 - 55- 22, 0.030, r = 2.55
Figure 1. MRF21125 Test Circuit Schematic
Table 5. MRF21125 Test Circuit Component Designations and Values
Designators B1 C1 C2, C4, C11, C12 C3, C7 C5, C14 C6 C8 C9 C10 C13 C15 C16 R1 R2 R3 R4 W1 Description Ferrite Bead (Square), Fair Rite #2743019447 9.1 pF Chip Capacitor, ATC #100B9R1CCA500X 22 F, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394 20000 pF Chip Capacitors, ATC #100B203JCA50X 5.1 pF Chip Capacitors, ATC #100B5R1CCA500X 100000 pF Chip Capacitor, ATC #100B104JCA50X 10000 pF Chip Capacitor, ATC #100B103JCA50X 7.5 pF Chip Capacitor, ATC #100B7R5CCA500X 1.2 pF Chip Capacitor, ATC #100B1R2CCA500X 0.1 F Chip Capacitor, Kemet #CDR33BX104AKWS 16 pF Chip Capacitor, ATC #100B160KP500X 0.6 - 4.5 pF Variable Capacitor, Johanson Gigatrim #27271SL 1.0 k, 1/8 W Chip Resistor 560 k, 1/8 W Chip Resistor 4.7 , 1/8 W Chip Resistor 12 , 1/8 W Chip Resistor Solid Copper Buss Wire, 16 AWG
MRF21125R3 MRF21125SR3 4 RF Device Data Freescale Semiconductor
VGG
V DD
C11 C9 C10 C8 R4 C7 C6 C12 W1 C13 C14
B1 R1 R2 C2 C3 C4
R3
C5
C15 C1 C16
MRF21125 Rev 5
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. MRF21125 Test Circuit Component Layout
MRF21125R3 MRF21125SR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
-20 -30 -40 -50 -60 (dB) -70 -80 -90 -100 -110 -120 f, FREQUENCY (MHz) -ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW -IM3 in 3.84 MHz BW +IM3 in 3.84 MHz BW 3.84 MHz Channel BW , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) VDD = 28 Vdc, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz 25 Channel Spacing (Channel Bandwidth): 10 MHz @ 3.84 MHz BW Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) 20 Gps 15 10 5 0 ACPR -5 4 12 20 28 8 16 24 Pout, OUTPUT POWER (WATTS, AVG. (W-CDMA)) 32 -55 -60 IM3 30 -20 -25 -30 -35 -40 -45 -50 IM3 (dBc), ACPR (dBc)
-10
Figure 3. 2 - Carrier (10 MHz Spacing) W - CDMA Spectrum
Figure 4. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 50 40 35 30 25 20 15 10 5 0 2080 2100 2120 2160 2140 f, FREQUENCY (MHz) 2180 IMD 0 -5 -10 -15 -20 Gps -25 -30 -35 -40 2200
160 Pout , OUTPUT POWER (WATTS) 144 128 112 96 80 64 48 32 16 0 0
VDD = 28 Vdc IDQ = 1600 mA f = 2120 MHz Pout
P3dB = 156 W
46 42 38 34 30 26 22 18
IRL VDD = 28 Vdc Pout = 125 W (PEP) IDQ = 1600 mA Two-Tone Measurement, 10 MHz Tone Spacing
P1dB = 135 W
Gps
14 10 6 16
2
4
6 8 10 12 Pin, INPUT POWER (WATTS)
14
Figure 5. CW Performance
Figure 6. Broadband Linearity Performance
IMD, INTERMODULATION DISTORTION (dBc)
-25 -30 -35 -40 -45 1600 mA -50 1300 mA -55 -60 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 2000 mA 1000 mA VDD = 28 Vdc f1 = 2112.5 MHz, f2 = 2122.5 MHz Two-Tone Measurement, 10 MHz Tone Spacing G ps , POWER GAIN (dB)
14 2000 mA 1600 mA 13 1300 mA 1000 mA 12
11
VDD = 28 Vdc f1 = 2112.5 MHz, f2 = 2122.5 MHz Two-Tone Measurement, 10 MHz Tone Spacing 1 10 Pout, OUTPUT POWER (WATTS) PEP 100
10
Figure 7. Intermodulation Distortion versus Output Power MRF21125R3 MRF21125SR3 6
Figure 8. Power Gain versus Output Power
RF Device Data Freescale Semiconductor
IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc)
176
f = 2110 MHz
Zo = 10
Zload
2170 MHz f = 2110 MHz Zsource
2170 MHz
VDD = 28 V, IDQ = 1600 mA, Pout = 20 W (Avg.), 2-Carrier W-CDMA f MHz 2110 2140 2170 Zsource 3.81 - j6.86 4.33 - j7.90 4.84 - j8.46 Zload 1.56 - j1.58 1.53 - j1.90 1.48 - j2.26
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance MRF21125R3 MRF21125SR3 RF Device Data Freescale Semiconductor 7
NOTES
MRF21125R3 MRF21125SR3 8 RF Device Data Freescale Semiconductor
NOTES
MRF21125R3 MRF21125SR3 RF Device Data Freescale Semiconductor 9
NOTES
MRF21125R3 MRF21125SR3 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
B G 4
1 2X
Q bbb
M
TA
M
B
M
(FLANGE) 3
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.16 (29.57) BASED ON M3 SCREW. INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.175 0.205 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.44 5.21 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF
K D TA
2 DIM A B C D E F G H K M N Q R S aaa bbb ccc
bbb
M
M
B
M
M bbb ccc H
M
(INSULATOR)
R ccc
M
(LID) M (INSULATOR) M
TA TA
M
B B
M
TA
M
B S
N
M M M
(LID)
aaa
M
TA
M
B
C F E A
(FLANGE)
T A
SEATING PLANE
CASE 465B - 03 ISSUE D NI - 880 MRF21125R3
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
B
1
(FLANGE)
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF
K D TA
2
bbb
M
M
B M
M
(INSULATOR)
R ccc
M
(LID) M (INSULATOR) M
bbb ccc H
M
TA TA
M
B B
M
TA TA
M
B S B
N
M M M
(LID)
aaa
M
M
DIM A B C D E F H K M N R S aaa bbb ccc
C F E A
(FLANGE)
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
T A
SEATING PLANE
CASE 465C - 02 ISSUE D NI - 880S MRF21125SR3
MRF21125R3 MRF21125SR3 RF Device Data Freescale Semiconductor 11
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MRF21125R3 MRF21125SR3
Rev. 12 9, 5/2006 Document Number: MRF21125
RF Device Data Freescale Semiconductor

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